Ternary Cu<sub>2</sub>SnS<sub>3</sub>: Synthesis, Structure, Photoelectrochemical Activity, and Heterojunction Band Offset and Alignment
نویسندگان
چکیده
Ternary Cu2SnS3 (CTS) is an attractive nontoxic and earth-abundant absorber material with suitable optoelectronic properties for cost-effective photoelectrochemical applications. Herein, we report the synthesis of high-quality CTS nanoparticles (NPs) using a low-cost facile hot injection route, which very simple method. The structural, morphological, optoelectronic, (PEC) heterojunction band alignment as-synthesized NPs have been systematically characterized various state-of-the-art experimental techniques atomistic first-principles density functional theory (DFT) calculations. phase-pure confirmed by X-ray diffraction (XRD) Raman spectroscopy analyses optical gap 1.1 eV exhibit random distribution uniform spherical particles size approximately 15–25 nm as determined from high-resolution transmission electron microscopy (HR-TEM) images. photocathode exhibits excellent PCE 0.55% (fill factor (FF) = 0.26 open circuit voltage (Voc) 0.54 V) photocurrent ?3.95 mA/cm2 under AM 1.5 illumination (100 mW/cm2). Additionally, PEC activities CdS ZnS are investigated possible photoanodes to create enhance activity. demonstrated higher current than ZnS, indicating that it better photoanode form CTS. Consistently, predict staggered type-II at CTS/CdS interface small conduction offset (CBO) 0.08 compared straddling type-I CTS/ZnS CBO 0.29 eV. observed aligned points efficient charge carrier separation transport across interface, necessary achieve enhanced synthesis, measurements, results provide promising approach fabricating next-generation Cu-based light-absorbing materials
منابع مشابه
Heterojunction band offset engineering
Control of band discontinuities in semiconductor heterostructures may introduce a new important degree of freedom in the design of heterojunction devices and allow independent optimization of carrier injection, carrier confinement and ionization thresholds in high speed and optoelectronic devices. We will review recently proposed methods to microscopically control heterojunction parameters by m...
متن کاملBiomolecule-assisted synthesis of carbon nitride and sulfur-doped carbon nitride heterojunction nanosheets: An efficient heterojunction photocatalyst for photoelectrochemical applications
A biomolecule-assisted pyrolysis method has been developed to synthesize sulfur-doped graphitic carbon nitride (CNS) nanosheets. During the synthesis, sulfur could be introduced as a dopant into the lattice of carbon nitride (CN). Sulfur doping changed the texture as well as relative band positions of CN. By growing CN on preformed sulfur-doped CN nanosheets, composite CN/CNS heterojunction nan...
متن کاملn+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level
We have fabricated and measured low barrier (30-150 meV) Schottky diodes using n+InGaAs/nGaAs pseudomorphic structures with up to 1.5% lattice mismatch. The I-V measurements at temperatures from 4 to 200 K show rectifying behavior and indicate transport mechanisms which range from tunneling to thermionic emission. The transport properties and barrier height determinations indicate that the band...
متن کاملBand structure engineering at heterojunction interfaces via the piezotronic effect.
Engineering the electronic band structure using the piezopotential is an important aspect of piezotronics, which describes the coupling between the piezoelectric property and semiconducting behavior and functionalities. The time-independent band structure change under short-circuit condition is believed to be due to the remnant piezopotential present at the interface, a result of the finite cha...
متن کاملValence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2021
ISSN: ['1520-5002', '0897-4756']
DOI: https://doi.org/10.1021/acs.chemmater.0c03223